X-band directional coupler with 6 dB coupling (7.0 to 12.4 GHz), Model 120706, offers superior performance ratings and is designed for system applications where external leveling, precise monitoring, signal mixing, or swept transmission and reflection measurements are required. KRYTAR also offers complete engineering services for custom designs covering the ultra-wideband frequency range.
Custom MMIC has added an amplifier to its Broadrange Distributed AmplifierTM portfolio, the CMD233C4. The 2 to 18 GHz distributed amplifier is a packaged version of the CMD233 die product. The CMD233C4 is a wideband GaAs MMIC distributed amplifier with a low noise figure of 4.5 dB and output 1 dB compression point of +20.5 dBm. This amplifier delivers over 9 dB of gain and operates from a single 3 to 6 volt supply.
LVA-123+ (RoHS compliant) is an advanced ultra-wideband amplifier fabricated using GaAs HBT technology and offers excellent gain flatness over a broad frequency range. In addition, the LVA-123+ has good input and output return loss over this frequency range without the need for external matching components. Lead finish is tin-silver over nickel. It has repeatable performance from lot to lot and is enclosed in a 3 x 3 mm 8-lead package for very good thermal performance.
RFMW Ltd. announces design and sales support for a small cell duplexer. The Qorvo TQQ7101 BAW technology offers high isolation for LTE Band 1 uplink (1950 MHz) and down link (2140 MHz) filter requirements in base stations, repeaters, signal boosters and small cells. With full 60 MHz bandwidth, in band insertion loss is only 3.7 dB while UL/DL attenuation is up to 44 dB. The TQQ7101 requires no external matching and handles 29 dBm of power.
Richardson RFPD Inc. announced the availability and full design support capabilities for a new LDMOS transistor from NXP Semiconductors. The MRF1K50H builds on the success of NXP's 1250 W MRFE6VP61K25H, delivering 1500 W CW at 50 V, along with superior ruggedness and thermal performance. The MRF1K50H can reduce the number of transistors in high-power RF amplifiers- decreasing amplifier size and BOM.
RFMW Ltd. announces design and sales support for a GaN power amplifier. The Qorvo TGA2218-SM offers 12 W of saturated output power from 13.4 to 16.5 GHz. Small signal gain is >28 dB while large signal gain is >23 dB. The TGA2218-SM draws 225 mA from a 28 V supply with 29% power added efficiency (PAE). Serving Commercial VSAT, Military Satcom, Radar and Data Link applications, the TGA2218-SM comes in a 5.5 x4.5 mm, air-cavity QFN package.
Aaronia AG presents the RF Drone Detection System. It is based on the Aaronia IsoLOG 3D Tracking Array Antenna, a rugged or remote-controllable Spectran V5 real-time Spectrum Analyzer and specialized RTSA Suite Software. The Aaronia Drone Detection System exploits the radio-frequency (RF) radiation emitted by the UAV’s onboard systems and by the operator’s control unit. Highlights of the system is the coverage of several kilometres, a detection time of 10 µS to 500 mS.
AtlanTecRF launched its RNG range of broadband noise generators featuring Ethernet control. The nineteen standard models have total noise output power in the range -20 to +30dBm with noise densities from -122 through to -13dBc/Hz. Output level can be controlled either locally with convenient and easy to interpret increase/decrease front panel buttons and LCD readout or via Ethernet with remote GUI derived from an mBed within the instrument.
Richardson RFPD Inc. announced the availability and full design support capabilities for a power limiter from MACOM Technology Solutions Inc. The MADL-011012 is a lead-free surface mount, high-power limiter, with an operating frequency range from 0.3 GHz to 1.0 GHz. It integrates the equivalent of 20 PIN, Schottky, limiter diodes, capacitors, inductors and resistors in a compact ceramic package.
RFMW Ltd. announces design and sales support for model P1AD-BNMM from P1dB. The P1AD-BNMM is a BNC male to BNC male adapter offering a miniature, quick connect/disconnect for commercial RF applications. Operating up to 3 GHz in a 50 ohm environment, the adapter’s body is nickel plated zinc while the center contacts are gold plated brass. The P1AD-BNMM features a maximum VSWR or 1.2:1.