RF & Microwave Industry News

New Cree GaN HEMT die available via distribution

 Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. 


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A Wilkinson power divider from Dielectric Laboratories

 From Knowles Capacitors comes a Wilkinson power divider from their Dielectric Laboratories (DLI) facility.  It is designed to provide in phase power splitting or combining over a broad bandwidth in low power applications.  This is achieved by application of precision thin film fabrication with integrated resistors, coupled with DLI’s high permittivity ceramic materials, to provide a high performance and repeatable design solution. 


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Linear Technology's 92mW direct conversion I/Q modulator

 A new low power I/Q modulator from Linear Technology enables battery-powered transmitters operating in the 30MHz to 1.3GHz frequency bands, breaking new ground in power consumption, sideband suppression, carrier leakage and dynamic range performance. The LTC5599 modulator, powered from a single 2.7V to 3.6V supply, draws only 28mA current, less than 60% that of alternative solutions-with no performance sacrifice.  


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LTE-advanced network deployments make material gains in 2014

 LTE-Advanced network deployments are becoming a tangible reality in 2014. As of the end of 1Q 2014, ABI Research estimates there were ~60 LTE-advanced trials, commitments and commercial deployments worldwide, of which 22 commitments were from Western Europe, 16 from Asia-Pacific, and 5 from North America. In addition, Voice over LTE (VoLTE) is gaining market traction in 2014, providing voice services alongside LTE mobile broadband in a reliable and profitable way. 


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New VPG RTD simulator

 Vishay Precision Group Inc. announced that its Vishay Foil Resistors brand (VFR) has introduced a new Bulk Metal® Foil RTD Simulator resistor with built-in climate control. Designed to simulate resistance temperature detector (RTD) PT-100 and PT-1000 outputs for the calibration of RTD instruments, the device features a low nominal TCR of ±1 ppm/°C from -55°C to +125°C, +25°C ref., and load-life stability of ±0.005% after 2,000 hours of rated power at +70°C. 


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DC-10 GHz 1 W amplifier module from P1dB

 RFMW Ltd. announces design and sales support for P1dB's P1-AMP00010-1-SMA, a DC to 10 GHz, 1 W, amplifier module. The P1-AMP00010-1-SMA is commonly used as a general purpose, broadband amplifier in test and measurement applications but also finds use in system integration projects where flat gain over broad bandwidth are needed. 


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San-tron's low-PIM mini-DINs

 San-tron Inc., a leading manufacturer of RF coaxial connectors and cable assemblies, has added high performance 4.1/9.5 mini-DIN connectors and adapters to their growing line of low-PIM SRX products. The mini-DINs feature RF performance through 16 GHz and yield low PIM of -160 dBc with VSWR < 1.10:1 up to 7 GHz. These new additions complement San-tron's low-PIM SRX toolbox of solutions. 


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