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ARTICLES

RFMW Ltd. to support new 50 ohm absorptive switch from TriQuint

July 25, 2014

 RFMW Ltd. announces design and sales support for a 50 ohm absorptive switch from TriQuint. The TQC0015 internal terminations can handle a maximum CW power of up to 2 W.  


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RFMW offers 5 W wideband GaN transistor

July 15, 2014

 RFMW Ltd. announces design and sales support fora 50 ohm, input matched, GaN transistor from TriQuint. The T1G3000532-SM spans 30MHz to 3.5GHz and can be tuned for power or efficiency depending on customer application. 


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RFMW introduces 35W GaN transistor from TriQuint Semiconductor

November 7, 2012

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s T1G4003532-FL, DC to 3.5 GHz GaN transistor offering up to 37W P3dB.  Gain at P3dB is >13dB requiring half the power from a driver stage compared to some competitors.


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RFMW introduces low insertion loss switch from RFMD

October 30, 2012

RFMW Ltd. announces design and sales support for the RFSW1012 from RFMD. This SPDT (single-pole, double throw) switch operates from 5 MHz to 6GHz in both 50 ohm and 75 ohm environments. Offering low insertion loss of 0.3dB with isolation of 37dB, the RFSW1012 serves multiple applications including LTE, WCDMA, CATV and SATV and is offered in a compact 2 x 2 x 0.55 mm package.


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RFMW introduces 2 x 2 mm LNA from TriQuint Semiconductor

October 10, 2012

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s TQP3M9037, internally matched, low noise amplifier combining a 0.4 dB noise figure with 20 dB gain and 35 dBm OIP3 in a 2 x 2 mm DFN package. This newest addition to TriQuint’s LNA product line provides an instantaneous bandwidth of 1500 to 2700 MHz and requires only bypass/blocking capacitors and a bias inductor for operation, no matching components are required to achieve this high level of performance.


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RFMW introduces 30W GaN PA from TriQuint Semiconductors

August 8, 2012

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s TGA2576-FL, 30W GaN on SiC power amplifier with frequency coverage from 2.5 to 6GHz.


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RFMW to exhibit at IMS 2012

May 24, 2012

RFMW announces its participation and attendance at the IEEE International Microwave Symposium 2012 (IMS 2012). RFMW will feature the latest products from their focused, RF suppliers and provide demonstrations on leading edge test and measurement technology. Product highlights include high power GaN amplifiers, high frequency MMIC amplifiers, new switch and attenuator technologies and the latest in small cell filtering for LTE and other wireless infrastructure.


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RFMW and MAST announce worldwide distribution agreement

March 8, 2012

RFMW Ltd. and MAST Technologies announced a worldwide distribution agreement effective October 3, 2011.  MAST Technologies is a leading designer and manufacturer of RF absorbing materials. RFMW Ltd. is a specialized distributor providing customers and suppliers with focused distribution of RF and microwave components as well as specialized component-engineering support.


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RFMW Ltd. Enhances Pan-European Strategy

June 23, 2011
RFMW Europe announces the addition of a new office in France. According to Peter Saxby, Managing Director – Europe, “We can now consider ourselves truly pan-European and we all look forward to helping RFMW and our suppliers meet the various challenges of RF and microwave component engineering and supply...
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