RF & Microwave Industry News

AWR Offers Technical, Social Activities at IMS 2011

AWR Corp. will offer a broad range of opportunities for current and prospective customers to learn more about its AWR 2011 software release, inclusive of Microwave Office™, AXIEM® and Visual System Simulator™ software during IMS 2011 in Baltimore. AWR (Booth 1618) will host a party, a reception, “Spotlight Talks,”...
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Integral Introduces 200 W Ku-band SSPA

Integral Systems Inc. announced the availability of its ultra-compact and efficient 200 W Ku-band Solid-state power amplifier (SSPA). The new 200 W SSPA, offered through Integral Systems’ SATCOM Solutions division, continues the company’s leadership in the SSPA market. Earlier this year, Integral Systems announced its 100 W SSPA, which...
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Microelectronics Component Manufacturers Increase Fiber-optic Network Capacity

As data consumption, driven by smartphones, video files and faster internet service, continues to skyrocket, service providers respond by increasing the amount and capacity of high data rate fiber in their transmission networks. The Strategy Analytics GaAs and Compound Semiconductor Technologies Service (GaAs) viewpoint, "Compound Semiconductor Industry Review March...
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Florida RF to Spotlight Line of High Power Terminations

Florida RF (Booth 1612) will be showcasing high power low PIM terminations at IMS 2011 in Baltimore, MD. Higher frequency spectrum usage, higher transmitter power levels and more sensitive receivers demand low passive intermodulation (PIM) distortion levels. Florida RF addresses this need with a line of high power terminations...
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AWR Announces First Winner of Design Challenge

Only one month after AWR initiated its ‘stop waiting and start designing™’ ad campaign, dozens of designers have taken up the challenge. However, it is Dr. Mark Holm of Selex, an experienced user of AWR’s Microwave Office™, AXIEM® and Visual System Simulator™ software, that is the first winner of...
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RFMD Introduces GaN Unmatched Power Transistor Family

RFMD introduces the development of its GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 μm GaN high electron mobility transistor (HEMT) semiconductor process, these high performance amplifiers show excellent peak drain efficiency and flat gain over a broad frequency range...
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Modelithics Celebrates 10-year Anniversary

Modelithics Inc., a provider of high-precision measurements and models for microwave/RF design simulation would like to thank its customers and partners as it celebrates its 10-year anniversary. Entrepreneurs Tom Weller and Larry Dunleavy founded Modelithics in 2001 to better address the industry-wide need for improved simulation models for RF...
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