advertisment Advertisement
This ad will close in  seconds. Skip now
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement

ARTICLES

NXP achieves breakthrough noise figure performance with extreme broadband amplifiers

NXP Semiconductors N.V. announced the availability of a new family of extreme-broadband amplifiers, applicable for CATV, broadcast TV, satellite systems and general ISM applications – the BGA3012, BGA3015 and BGA3018. Delivering outstanding performance on key parameters including high P1dB and OIP3, very low noise figures, 5 and 8V supply voltage operation and a superior ESD rating, these amplifiers are suitable for applications that require robustness and outstanding gain, noise and linearity performance, providing end users with improved reception quality and higher bandwidth.


Read More

NXP delivers industry's first ultra-wideband Doherty amplifiers

NXP Semiconductors N.V. announced the availability of its ultra-wideband Doherty reference design using the BLF884P and BLF884PS – the industry’s first wideband Doherty power amplifiers capable of broadband operation (470 to 806 MHz). The new 70W DVB-T LDMOS designs bring the high-efficiency gains of Doherty topologies to broadcast transmitters, using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum.


Read More

NXP develops industry’s first full-band UHF Doherty architecture

Building on its leadership position in the digital broadcast market, NXP Semiconductors N.V. announced that it has developed the industry’s first ultra wideband solution for Doherty architectures. This patent-pending solution will uniquely enable manufacturers of digital transmitters to enjoy the high-efficiency gains that Doherty power amplifiers confer with greatly expanded bandwidth.


Read More

NXP IQ modulators feature highest dynamic range with DC-independent DAC interfacing

NXP Semiconductors N.V. announced two 5V wideband IQ modulator devices that combine high dynamic range with fast on/off switching performance for use in radio frequency up-conversion. Operating between 400 MHz and 4 GHz, the BGX7100 and BGX7101consume less than 1 W power – 10-percent more efficient than other solutions on the market today.


Read More

NXP Introduces Gen8 LDMOS Technology For Bandwidth Intensive Base Stations

NXP Semiconductors N.V. has introduced its eighth generation (Gen8) LDMOS RF power transistors for wireless base stations – allowing signal bandwidths up to 60 MHz and providing optimized I/O matching structures to enable wideband, affordable, compact, multi-standard and highly efficient Doherty power amplifiers. The transistors were introduced during IMS...
Read More

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement