Texas Instruments Inc. (TI) introduced a family of 12-bit, 500- to 900-MSPS analog-to-digital converters (ADCs) that reduce board space by 80 percent while providing industry-leading signal-to-noise ratio (SNR) and spurious-free dynamic range (SFDR).
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.
Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.
Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth. As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.
Vaunix Technology Corp., (www.vaunix.com), a manufacturer of USB controlled and powered test equipment, is pleased to announce they’ll be displaying their latest models of USB powered Lab Bricks at the International Microwave Symposium (IMS) in Seattle, WA June 4-6th in booth #2042.
Continuing to build momentum and recognition for their “Size Matters” HPA platforms, Empower RF Systems is hosting live demonstrations of their 1 kW, 20 to 1000 MHz, 5U chassis design (model 2162) at IMS 2013, Booth 1827.
TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, released its new gallium nitride (GaN) integrated power doubler with superior performance for fast-growing CATV infrastructure.
Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC to 2.5 GHz, 50 W power transistor with 15 dB saturated gain and 65% peak drain efficiency at 2 GHz.
Aeroflex/Inmet, an operating unit of Aeroflex Inc., has rebranded the surface mount resistive power products which were previously marketed under the Aeroflex/KDI-Resistor Products banner as POWERFILM™. This product line was transferred to Aeroflex/Inmet in August 2011, whereas product improvements coupled with pending new product introductions, provide a platform to introduce a new brand refocused on the foundation built over the past 50 years.