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Articles Tagged with ''power''

RFMD introduces 500 W GaN L-Band amplifier

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.


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Cree ships over 2 M GaN HEMT devices for telecom infrastructure

Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.  As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.


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Nitronex qualifies rugged NPT1015 transistor

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC to 2.5 GHz, 50 W power transistor with 15 dB saturated gain and 65% peak drain efficiency at 2 GHz.


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Aeroflex/Inmet launch POWERFILM line

Aeroflex/Inmet, an operating unit of Aeroflex Inc., has rebranded the surface mount resistive power products which were previously marketed under the Aeroflex/KDI-Resistor Products banner as POWERFILM™. This product line was transferred to Aeroflex/Inmet in August 2011, whereas product improvements coupled with pending new product introductions, provide a platform to introduce a new brand refocused on the foundation built over the past 50 years.


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