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Articles Tagged with ''power''

New VPG ultra-high-precision Z1-foil wrap-around chip resistors tested per EEE-INST-002 and MIL-PRF-55342

Vishay Precision Group Inc. announced that its Vishay Foil Resistors brand (VFR) has introduced a new series of military-qualified, ultra-high-precision Z1-Foil wrap-around chip resistors. Tested per EEE-INST-002 (Tables 2A and 3A, Film/Foil, Level 1) and MIL-PRF-55342, devices in the 303261 - 303266 seriesprovide exceptional load-life stability of ±0.0025% typical after rated power at 70°C for 2,000 hours, low nominal TCR of ±0.2 ppm/°C from -55°C to +125°C, +25°C ref., PCR (ΔR due to self heating) of 5 ppm at rated power, and tight tolerances to ±0.02%.


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RFMW Ltd. announces Aviacomm distribution agreement

RFMW Ltd. and Aviacomm Inc. announced a distribution agreement effective April 1, 2014. The agreement initially covers customers in North America, Europe and South East Asia with the possibility of future expansion. Aviacomm is a leader in wideband RF CMOS ICs. RFMW Ltd. is a specialized distributor providing customers and suppliers with focused distribution of RF and microwave components as well as specialized component-engineering support.


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Cree adds four new GaN HEMTs for radar to Digi-Key portfolio

Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.


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Pasternack introduces all new line of X-Band amplifiers

Pasternack Enterprises Inc., an industry leading manufacturer and supplier of RF, microwave and millimeter wave products, introduces a new family of coaxial X-Band high gain power amplifiers. These RF amplifiers are typically used as driver amplifiers or high power output amplifiers in a wide variety of commercial, industrial and military applications including telecom infrastructure, test instrumentation, fixed microwave backhaul, radar systems, communication systems, satellite communications and commercial avionics.


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RFMD awarded $9.7M Air Force contract to produce MM Wave GaN integrated circuits

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced it has signed a $9.7 million agreement with the Manufacturing and Industrial Technologies Directorate within the Air Force Research Laboratory (AFRL) to transfer and produce a 0.14 micron Gallium Nitride (GaN) monolithic microwave integrated circuit (MMIC) technology. The technology will be scaled to 6-inch diameter wafers using RFMD's industry-leading 6-inch GaN-on-Silicon Carbide (SiC) manufacturing line.


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