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Cree has released two new unmatched 50 V gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in high power broadband amplifier, CW, and pulsed applications. Exhibiting high efficiency, high gain, and wide bandwidth capabilities, in addition to high power density, low parasitics, and high current gain cutoff frequency (FT), the new 30 W CGHV40030 and 100 W CGHV40100 significantly improve the efficiency and bandwidth capabilities of multi-octave to instantaneous bandwidth amplifiers and a wide range of L- and S-Band products. Further, both the 30 and 100 W 50 V GaN transistors are available in a two-leaded flange or pill package.
The CGHV40030 transistor features 30 W typical output power, up to 6 GHz operation, 16 dB gain at 1.2 GHz, and a 0.96 to 1.4 GHz broadband reference design, which makes it well suited for use in a wide variety of L-, S-, and C-Band amplifier applications.
The CGHV40100 transistor offers a general purpose, broadband solution for a variety of RF and microwave applications, but is especially well suited for linear and compressed amplifier circuits. It features 100 W typical output power, up to 3 GHz operation, 18 dB small signal gain at 2.0 GHz, and a 0.5 to 2.5 GHz broadband reference design. The 100 W GaN transistor also demonstrates 55 percent efficiency at PSAT.
Datasheets for Cree’s new 50V GaN HEMTs are available at: http://www.cree.com/RF/Products/General-Purpose-Broadband-50-V/Packaged-Discrete-Transistors/CGHV40030 and http://www.cree.com/RF/Products/General-Purpose-Broadband-50-V/Packaged-Discrete-Transistors/CGHV40100.
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