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RFMD’s family of gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifiers (LNAs), the RF386X, offer capabilities from 700 to 3800 MHz and provide the best-in-class combination of low noise and high linearity performance, as compared to competing solutions.
These new broadband LNAs are ideally suited for wireless networks, including cellular, WLAN and WiMAX infrastructure. Designed for first stage low noise and linear driver amplification targeting CDMA, PCS, DCS, UMTS, WLAN and WiMAX applications, the LNAs are offered in a variety of configurations - single stage, dual stage and dual channel.
Each LNA is internally matched, giving network designers maximum flexibility with minimal external biasing, thereby simplifying design requirements and accelerating time-to-market. Each RF386X LNA is also contained in a low-cost, industry-standard QFN package.
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