RF Micro Devices Inc. (RFMD) announced the availability of the RF386X family of gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) low noise amplifiers (LNA). RFMD’s new PHEMT LNAs offer capabilities from 700 to 3800 MHz and provide the best-in-class combination of low noise and high linearity performance, as compared to competing solutions. The new broadband LNAs are ideally suited for wireless networks, including cellular, WLAN and WiMAX infrastructure.

Jeff Shealy, vice president of RFMD’s infrastructure product group, said, “Our new RF386X family of LNAs covers multiple octaves in frequency while delivering excellent noise performance and linearity, resulting in a single component which delivers enhanced signal quality to the customer for multiple radio applications. Our competitive broadband solutions have resulted in design wins worldwide for applications across multiple growth markets.”

The RF386X family of LNAs is designed for first stage low noise and linear driver amplification targeting CDMA, PCS, DCS, UMTS, WLAN and WiMAX applications. The LNAs are offered in a variety of configurations – single stage, dual stage and dual channel, and each LNA is internally matched, giving network designers maximum flexibility with minimal external biasing, thereby simplifying design requirements and accelerating time-to-market. Each RF386X LNA is contained in a low cost, industry-standard QFN package.

RFMD is a supplier of small-signal devices, such as LNAs, and has shipped greater than 400 million small signal devices to date, primarily into the handset industry. RFMD is leveraging its existing core competencies, including design expertise, compound semiconductor process technology, packaging technology and manufacturing scale, as its new LNAs and other infrastructure products ramp into multiple growth markets.