NXP Semiconductors N.V. has introduced its eighth generation (Gen8) LDMOS RF power transistors for wireless base stations – allowing signal bandwidths up to 60 MHz and providing optimized I/O matching structures to enable wideband, affordable, compact, multi-standard and highly efficient Doherty power amplifiers. The transistors were introduced during IMS 2011 in Baltimore.
NXP’s Gen8 Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistors are being sampled for applications up to 960 MHz with excellent linearization capabilities, extreme ruggedness and efficiencies in excess of 55 percent for multicarrier GSM power amplifiers. The second wave of products will cover GSM-WCDMA-LTE at 1800, 1900 and 2100 MHz and will sample during 2011.
Wireless infrastructure providers are under increasing pressure to bring cost-effective and power-efficient base stations to market quickly. The pressures are extending beyond emerging countries into the more mature markets, and are further compounded by the multiplicity of cellular standards, frequency bands and network sharing requirements for rural deployments. NXP’s Gen8 LDMOS technology is designed to address each of these challenges to deliver multiband and wideband power amplifiers, as well as multi-mode base transceiver stations (BTS) – with a low-energy, cost-optimized footprint.