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Military Microwaves Supplement
Recent Advances in Radar Technology
Using Calibration to Optimize Performance in Crucial Measurements
At IMS 2011 this week, NXP Semiconductors N.V. (Booth 420) is showcasing a live demo of its next-generation products based on Gallium Nitride (GaN) technology. The GaN demo includes a 50 W wideband amplifier, the CLF1G0530-50, covering 500 to 3000 MHz; 2.1 GHz and 2.7 GHz Doherty power amplifiers for base stations; and a 100 W amplifier, the CLF1G2535-100, covering 2.5 to 3.5 GHz. NXP has developed its high frequency, high power GaN process technology in collaboration with United Monolithic Semiconductors and the Fraunhofer Institute for Applied Solid State Physics. NXP is now uniquely positioned as the largest semiconductor company to offer both LDMOS and GaN solutions. Engineering samples of NXP’s first GaN power amplifiers are available immediately.
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