advertisment Advertisement
This ad will close in  seconds. Skip now
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
Industry News / Amplifiers / Semiconductors / Integrated Circuits

RFMD Unveils Power Platform for Entry-level 3G Handsets

February 14, 2011
/ Print / Reprints /
| Share More
/ Text Size+

RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high performance radio frequency components and compound semiconductor technologies, announced the expansion of the company's 3G product portfolio to include a complete power platform for entry-level 3G handsets. The RF323x power platform, comprised of the RF323x and RF72xx product families, provides handset manufacturers a complete reference design for the implementation of multi-region multimode 3G handset platforms.

RFMD's RF323x power platform addresses the challenges confronting handset manufacturers as they seek to meet the increasing global demand for affordable smartphones. Using RFMD's RF323x power platform, designers of entry-level 3G smartphones can achieve the optimum balance of cost, performance and flexibility in the RF front end while satisfying critical requirements for quality and reliability in high-volume handset manufacturing.

Eric Creviston, President of RFMD's Cellular Products Group (CPG), said, "Our customers see cost as a key driver in the entry-level 3G segment and want flexible front-end solutions that scale easily to address multiple operator and regional requirements. Our high-efficiency 3G entry power platforms provide a full array of tiered options at compelling price points, setting the benchmark for ease of implementation and current consumption in a single, scalable reference design."

RFMD's RF323x power platform features the high-efficiency PowerStar®-based RF323x 2G transmit module with pin-compatible options supporting either one or two bands of W-CDMA. The pin-compatible W-CDMA PAs are available in two product family options. The first option, the RF724x family of W-CDMA power amplifiers, addresses all major frequency bands and delivers industry-leading peak efficiency and DG.09 as low as 13 mA through the use of multi-bias control. The second option, the RF722x family of W-CDMA power amplifiers, also addresses all major frequency bands and is optimized for chipsets using three-mode control schemes.

RFMD's RF323x power platform for entry-level 3G handsets is compatible with major chipset providers including Qualcomm, Mediatek, Broadcom and ST Ericsson. Samples are available now, and volume production is anticipated in the March 2011 quarter.


Recent Articles by RF Micro Devices Inc.

Post a comment to this article

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement