Pat Hindle, MWJ Editor
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Hindle
Pat Hindle is responsible for editorial content, article review and special industry reporting for Microwave Journal magazine and its web site in addition to social media and special digital projects. Prior to joining the Journal, Mr. Hindle held various technical and marketing positions throughout New England, including Marketing Communications Manager at M/A-COM (Tyco Electronics), Product/QA Manager at Alpha Industries (Skyworks), Program Manager at Raytheon and Project Manager/Quality Engineer at MIT. Mr. Hindle graduated from Northeastern University - Graduate School of Business Administration and holds a BS degree from Cornell University in Materials Science Engineering.

First Junctionless Transistor Fabricated

March 8, 2010
A team of scientists at the Tyndall National Institute have designed and fabricated the world's first junctionless transistor that could revolutionize IC chip manufacturing. Existing ICs are based on junctions which turn the current off and on to control the device but in the junctionless Tyndall device, the current flows in a very thin silicon wire and the flow of current is controlled by a ring structure that electrically squeezes the silicon wire to control the current. These devices are easier to fabricate and can be made on a smaller scale than current junction devices which seem to be nearing their limit for miniaturization. The junctionless devices also act more like a perfect transistor so they have less leakage current and could reduce power consumption.

I wonder how a RF junctionless transistor would behave. Any insights or thoughts?
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