David Vye, MWJ Editor
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David Vye is responsible for Microwave Journal's editorial content, article review and special industry reporting. Prior to joining the Journal, Mr. Vye was a product-marketing manager with Ansoft Corporation, responsible for high frequency circuit/system design tools and technical marketing communications. He previously worked for Raytheon Research Division and Advanced Device Center as a Sr. Design Engineer, responsible for PHEMT, HBT and MESFET characterization and modeling as well as MMIC design and test. David also worked at M/A-COM's Advanced Semiconductor Operations developing automated test systems and active device modeling methods for GaAs FETs. He is a 1984 graduate of the University of Massachusetts at Dartmouth, with a concentration in microwave engineering.

GaN at EuMW and Around the World

September 14, 2012

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The excitement over GaN devices for wireless applications continues in 2012 as leading integrated device manufacturers prepare to unveil their latest GaN products at European Microwave Week. Expect product announcements from Cree, M/A-Com Technology Solutions, NXP, OMMIC, RFHIC, TriQuint Semiconductor, UMS and WIN Semiconductors, which just introduced GaN processes to its pure-play foundry services this past February.

Cree will make a strong play for the telecommunications market with a significant expansion to its product line specifically targeting this end-market, especially in Asia. At EuMW, the company will reveal these new products targeting telecommunications bands with new technology to deliver greater efficiency and linearity. M/A-Com announced that it would be introducing a number of products/technologies at EuMW including the Industry’s first GaN transistors in low cost, high power plastic surface mount packaging. NXP’s Pieter Hooijmans, Vice President of R&D and strategy, will surely talk about GaN as he discusses the industrial quest for microwave technologies in his plenary speech at the conference on Monday.

At this year’s Defense, Security and Space forum hosted by Microwave Journal, David Aichele, Director of RFMD Power Business Unit, will be talking about High Power GaN solutions for next generation radar and Dean White, Integrated Products Manager at TriQuint Semiconductor, will discuss his company’s latest technology in his talk, “Advances in GaN / GaAs MMIC & Packaging Technology Supporting Next-Generation Phased Array Radars”

Globetrotting over to the Asian market, we will be able to further track GaN developments into the New Year at EDI CON in Beijing, China. At this event, OMMIC and WIN Semiconductors will run individual workshops on GaN foundry technology, Auriga CTO, Yusuke Tajima will talk about GaN PHEMT modeling, technical papers have been accepted on using GaN in a variety of Doherty Power Amplifier architectures and another expert GaN panel is being assembled with an early commitment from GaN newcomer, Freescale Semiconductor participating as a sponsor/speaker.