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A Dynamic Drain Current Model for MESFET/HEMTs Valid Under Varying Static Bias and Temperature Conditions

Modifications to the Dortu-Muller DC drain current model for GaAs MESFET/HEMT devices that enable the dynamic output characterisitcs of the device to be simulated under different temperature and static bias conditions
TECHNICAL FEATURES A Dynamic Drain Current Model for MESFET/HEMTs Valid Under Varying Static Bias and Temperature Conditions J.M. Cairon, A. Tazon, T. Fernandez, C. Navarro and A. Mediavilla University of Cantabria Cantabria, Spain J. Rodriguez-Tellez University of Bradford West Yorkshire, UK Modifications to the Dortu-Muller DC drain current model...
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