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InP-based HBT Technology for Next-generation Lightwave Communications

Recent advances in InA1As/InGaAs-InP heterojunction bipolar transistor (HBT) technology that reveal the performance capability of key optoelectric HBT MMICs critical for next-generation high speed lightwave communications
InP-based HBT Technology for Next-generation Lightwave Communications InAlAs/InGaAs-InP heterojunction bipolar transistor (HBT) technology offers high device speed, low 1/f flicker noise and monolithic integration of 1.55 mm InGaAs photodetectors making them well suited for next-generation, high data rate optoelectronic communication links. Application toward next-generation > 40 Gbps communication systems...
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