ARTICLES

GaN Ka-band Amplifiers for Satcom Applications

This white paper offers an overview of the advantages of gallium nitride (GaN) for high and moderate power levels in Ka-band satellite communications applications. The paper includes a discussion of the RF power amplification challenges presented by Ka-band data transmission, including the need for high power transmission, wide bandwidth and high linearity. Altum RF’s family of GaN amplifiers is presented, with illustrations of how these components suit specific scenarios within Ka-band satcom applications. The paper concludes with a demonstration of the importance of accurate modelling of electrical and thermal effects for these applications, given the high power levels and high frequencies required.


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Wideband, High-Power GaN PAs in SMT Packages Preserve Electrical and Thermal Performance While Simplifying Design

This paper discusses gallium nitride as the preferred technology over gallium arsenide for facilitating power levels up to 10 watts and providing superior performance with simpler handling and assembly requirements. Topics include circuit design implications for these higher power levels, surface mount packaging for simplified design, performance examples and applications.


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Wideband, High-Power GaN PAs in SMT Packages Preserve Electrical and Thermal Performance While Simplifying Design

This paper discusses gallium nitride as the preferred technology over gallium arsenide for facilitating power levels up to 10 watts and providing superior performance with simpler handling and assembly requirements. Topics include circuit design implications for these higher power levels, surface mount packaging for simplified design, performance examples and applications.


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