Mitsubishi Electric US Inc. will present a hands-on mini lab showcasing its high-efficiency, wideband GaN Doherty amplifier at Radio Wireless Week 2018 (RWW2018), held January 15–16 in Garden Grove, California.
Raytheon Co and Lockheed Martin Corp are working with Japanese partners on rival projects to develop new radars that will enhance Japan's shield against any North Korean missile strike, according to government and defense industry sources. Raytheon is allied with Mitsubishi Electric Corp on the project while Lockheed is working with Fujitsu Ltd.
Mitsubishi Electric Corporation, Nokia Bell Labs and the Center for Wireless Communications at UC San Diego announced their joint development of the world’s first ultra-fast GaN envelope tracking power amplifier, which supports modulation bandwidth up to 80 MHz and will reduce energy consumption in next-generation wireless base stations.
Mitsubishi Electric Corporation is expanding its line of GaN HEMTs to add devices with 70 and 100 W output power at Ku-Band, developed for satellite earth stations. Samples will be available beginning October 1, with full availability by January 1, 2017.
Mitsubishi Electric Corp. announced that it would expand its lineup of gallium nitride high electron mobility transistors (GaN-HEMTs) for use in base transceiver stations (BTS) operating in the 3.5 GHz Band of fourth generation (4G) mobile communication systems. The four new GaN-HEMTs offer output power and efficiency levels that are among the highest currently available according to company research as of December 22. Samples will be released starting February 1.
In many quarters it is expected that Long Term Evolution (LTE) will be the next generation standard or the 3.9 generation (3.9G) mobile phone standard, which could be introduced as early as this year. The LTE advantage is a very high-speed data transfer capability of up to 326 Mbps...