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Giga-tronics has introduced the GT-1000B option 06 and the GT-1050B/GT-1051B olid-state ultra-wideband microwave power amplifiers which cover 100 MHz to 20 GHz and 10 MHz/2 GHz to 50 GHz respectively, with high output power, low noise figure and low harmonics in a single amplifier.
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is introducing a new 6-20 GHz Low-Noise Amplifier to its growing product library, the CMD194C3. The new packaged broadband amplifier offers low noise figure and high gain while requiring a single-supply voltage.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new diffused metal oxide semiconductor (DMOS) transistor from STMicroelectronics (ST).
Richardson RFPD Inc. announces the availability of the industry's first 1Ω, 1700V Silicon Carbide (SiC) metal oxide semiconductor (MOSFET) from Cree Inc. (Cree).
Peregrine Semiconductor Corp. announces the UltraCMOS 10 platform, the newest advancement in Peregrine’s UltraCMOS technology. UltraCMOS 10 RF SOI delivers both flexibility and unparalleled performance for addressing the ever-increasing challenges of RF front-end design.
Richardson RFPD Inc. announces availability and full design support capabilities for a new 28 V gallium nitride-on-silicon (GaN-on-Si) RF power amplifier from Nitronex.
Empower RF Systems, a global leader in power amplifier solutions that are critical to defense, commercial, and industrial market applications, will be exhibiting at AOC in Washington, D.C. (Oct 28 – 30).
Leading RF GaN device manufacturers including Cree, MACOM, NXP and Freescale will discuss their GaN solutions in workshops and technical presentations to an audience of RF/microwave design engineers and system integrators.
Linear Technology Corp. introduces the LT4321, an ideal diode bridge controller that replaces two diode bridge rectifiers with low-loss N-channel MOSFET bridges to increase the available power and reduce heat dissipation in a Power over Ethernet Powered Device (PoE PD). IEEE 802.3 PoE specifications require PDs to accept DC supply voltages of any polarity over their Ethernet inputs.