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Pasternack Enterprises Inc. announces the release of ten new 1 and 2 Watt broadband amplifiers, which are ideal for defense, EW/ECM, radar, test instrumentation, telecom, satcom, microwave radio and industrial applications from 2 GHz to 18 GHz.
RFMW Ltd. and Aviacomm Inc. announced a distribution agreement effective April 1, 2014. The agreement initially covers customers in North America, Europe and South East Asia with the possibility of future expansion. Aviacomm is a leader in wideband RF CMOS ICs. RFMW Ltd. is a specialized distributor providing customers and suppliers with focused distribution of RF and microwave components as well as specialized component-engineering support.
Fox Electronics, a leading global supplier of frequency control solutions and an IDT company, now offers an LVDS version, in addition to the recently released LVPECL version of its next generation ultra precision oscillator technology, XpressO-ULTRA. Designed to meet today’s intense bandwidth requirements that need ultra precision timing technology, XpressO-ULTRA provides exceptionally clean and stable clocking to ensure better performance and lower bit rate errors.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 50 to 2700 MHz, 75 W, 5 V RF amplifier from M/A-COM Technology Solutions (MACOM).
Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.
Crystek's CVCO55CC-2950-2950 Voltage Controlled Oscillator (VCO) operates at 2950 MHz with a control voltage range of 0.5 V~4.5 V This VCO features a typical phase noise of -115 dBc/Hz @ 10 KHz offset and has excellent linearity. Output power is typically +7 dBm.
Learn how Cree is a the leader in GaN-on-SiC technology and provides design engineers with a proven foundry process for producing highly-reliable GaN HEMT MMIC devices with a high rate of first-pass success and improved yields.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for two new gallium nitride on silicon carbide (GaN on SiC) low noise amplifiers (LNA) from TriQuint.
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the product release of the CMD201, a new DC to 20 GHz distributed MMIC power amplifier in die form.
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Pasternack Enterprises Inc. announces the release of ten new 1 and 2 Watt broadband amplifiers, which are ideal for defense, EW/ECM, radar, test instrumentation, telecom, satcom, microwave radio and industrial applications from 2 GHz to 18 GHz.
Richardson RFPD Inc. announces that it is accepting orders for two new solutions for simplifying next generation Doherty architecture.
Learn how Cree is a the leader in GaN-on-SiC technology and provides design engineers with a proven foundry process for producing highly-reliable GaN HEMT MMIC devices with a high rate of first-pass success and improved yields.