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Richardson RFPD Inc. announces availability of the latest Silicon Carbide (SiC) power MOSFET from Cree Inc. (Cree). The second-generation SiC Z-FET™ 1200V MOSFET C2M0080120D delivers industry-leading power density and switching efficiency, at half the cost-per-amp of Cree’s previous-generation MOSFETs.
Hesse Mechatronics, Inc. (formerly Hesse & Knipps), leading manufacturer of high-speed fine pitch wedge bonders and fully automatic heavy wire and ribbon bonders for the backend semiconductor industry, announces that it will offer application development, prototyping and pre-production services on a newly installed BONDJET BJ939 Fully Automatic Heavy Wire Bonder.
Peregrine Semiconductor Corp., a fabless provider of high-performance radio frequency integrated circuits (RFICs), announced availability of the industry’s highest-isolation SPDT RF switch for the wireless infrastructure market. The UltraCMOS® based PE42420 RF switch has high isolation of 64 dB @ 4 GHz — an approximately 20% increase over competing devices on the market.* Additionally, the switch features HaRP™ technology enhancements to deliver high linearity, with an IIP3 of 65 dBm.
M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.
The emerging market for Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives.
TriQuint Semiconductor Inc. announced that it has produced the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafersthat substantially reduce semiconductor temperatures while maintaining high RF performance. TriQuint’s breakthrough technology enables new generations of RF amplifiers up to three times smaller or up to three times the power of today’s GaN solutions.
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added four new amplifiers in die form to its product family: the CMD164, 165, and 173 distributed amplifiers, and the CMD166 driver amplifier.
BeSpoon, a fabless semiconductor company, and CEA-Leti have demonstrated an IR-UWB integrated circuit able to measure distances within a few centimeters’ accuracy, and have established a world-record operating range at 880 m (standard regulation) and 3,641 m (emergency situations).
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new evaluation kit for a 5W GaN MMIC power amplifier from Nitronex.
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Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added four new amplifiers in die form to its product family: the CMD164, 165, and 173 distributed amplifiers, and the CMD166 driver amplifier.