Richardson RFPD Inc. announced the availability for a 1700 V SiC MOSFET. The C2M1000170J features high blocking voltage with low RDS (on), low parasitic inductance, ultra-low drain gate capacitance, and a separate driver source pin. It is easy to parallel and simple to drive. The new MOSFET offers higher system efficiency, smooth switching waveforms, reduced cooling requirements, and increased system reliability.