Semiconductors/RFICs/MMICs

RFIC Chipset: HMC1190LP6GE / HMC1197LP7FE

10-17-12_hmc1190lp6_hmc1197lp7f_prHittite Microwave Corp., the world class supplier of complete MMIC based solutions for communication & military markets, has released a new receiver (Rx) and transmitter (Tx) radio frequency integrated circuit (RFIC) chipset. Both the HMC1190LP6GE and HMC1197LP7FE are ideal for frequency conversion applications in wireless infrastructure equipment such as base transceiver stations, remote radio units, small cells and repeaters from 700 to 3500 MHz.


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GaN - SiC High Electron Mobility Transistor: T1G6003028-FS

MK1204xxT1G6003028Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 30 W (P3dB), DC to 6 GHz, discrete GaN on SiC high electron mobility transistor (HEMT) from TriQuint Semiconductor, Inc. (TriQuint). The T1G6003028-FS is constructed with TriQuint’s 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


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Liquid Cold Plate Heat Sinks

MK120416PriathermLiquidColdPlatesRichardson RFPD Inc. announces availability and full design services support for four new liquid cold plate heat sinks from PriaTherm. The four devices are light and compact, offer uniform cooling distribution under mounted power modules, and feature an aluminum alloy Al EN AW 6060 finish. Their brazed design protects against leaks.


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Single-Chip Front End Module: RFFM6901

RFFM6901RFMD’s RFFM6901 is a single-chip front end module (FEM) for applications in the 868/915MHz ISM Band. The RFFM6901 addresses the need for aggressive size reduction for typical portable equipment RF front end design and greatly reduces the number of components outside of the core chipset, thus minimizing the footprint and assembly cost of the overall solution.


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Step-Down µModule® Regulator: LTM4641

LTM4641Linear Technology Corp. introduces the LTM4641, a 4.5 to 38 V input, 0.6 to 6 V output, 10A step-down µModule® regulator with comprehensive electrical and thermal protection for loads such as processors, ASICs and high-end FPGAs. The LTM4641 µModule regulator monitors input voltage, output voltage and temperature conditions.


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High Linearity WiFi Front End Modules

RFFM4203_SPRFMD’s new high linearity WiFi front end modules provide complete integrated solution in a single front end module (FEM) for WiFi systems. The ultra-small form factor and integrated matching minimizes layout area in the application and greatly reduces the number of external components. This simplifies the total front end solution by reducing the bill of materials, system footprint, and manufacturability costs.


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Insulated-Gate Bipolar Transistors

Microsemi_1200V_NPT_IGBTs-01Richardson RFPD, Inc. announces availability and full design support capabilities for a new family of 1200 V non-punch-through (NPT) insulated-gate bipolar transistors (IGBTs) from Microsemi Corporation (Microsemi). This new generation of IGBTs offers a dramatic reduction of twenty percent, or more, in total switching and conduction losses.


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LPN Amplifier Modules: HMC-C072, 76, 77, and 79

08-07-2012_hmc_c072Hittite Microwave Corp. has recently reduced the list price of their HMC-C072, HMC-C076, HMC-C077, and HMC-C079 GaAs HBT ultra-low phase noise amplifier modules that are ideal for high performance applications in microwave radio, military & space, radar systems, test instrumentation and synthesizer applications from 1.5 to 12 GHz.


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GaN Power Doubler Module: RFCM2680

RFCM2680_SPThe RFCM2680 is the industry's first surface mount GaN power doubler module aimed at CATV networks. Employing a combination of GaN HEMT and GaAs pHEMT technologies, the device provides high output capability from 45 to 1003 MHz with excellent distortion performance.


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Power Amplifiers: HMC994LP5E / HMC1049

07-05-12_hmc994lp5_hmc998lp5_hmc1049Hittite Microwave Corp., has launched two new power amplifier products which are ideal for microwave radio, EW, ECM and radar applications to 28 GHz. Also released is a unique wideband LNA which operates from 300 MHz to 20 GHz and is ideal for wideband multi-chip-module and subsystem applications.


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