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Raytheon has been awarded a four-year, $15 million contract from DARPA to increase the electronic capability of RF sensors with high-power-density GaN transistors.
GaN Systems announced availability of its GaN transistor ADS models to facilitate customer ease-of-use in RF power markets traditionally dominated by expensive Si LDMOS and other RF power technologies.
Ampleon announced the Gen10 series of LDMOS RF power transistors that offers lower power consumption and increased efficiency for wireless infrastructure PAs.
Integra Technologies Inc. (ITI), a leading designer and manufacturer of high-power RF transistors, pallets and amplifiers, will be showcasing its products at EDI CON USA, taking place September 20-22, at the Hynes Convention Center in Boston, Mass.
MACOM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, announced the newest entries in its MAGb series of GaN on Silicon power transistors for use in macro wireless base stations.
Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems.
Wolfspeed, A Cree Company, announced that as of the end of 2015, it shipped GaN-on-SiC RF power transistors with a combined RF output power of more than 1.3 gigawatts.
Ampleon announced the release of a comprehensive portfolio of overmoulded plastic (OMP) RF power transistors using the well known, extremely rugged LDMOS technology.
Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems.
Ampleon announced the release of a comprehensive portfolio of overmoulded plastic (OMP) RF power transistors using the well known, extremely rugged LDMOS technology.