Articles Tagged with ''transistors''

Ampleon has extended its portfolio of GaN RF power transistors based on a 0.5 µm HEMT process technology.

Qorvo Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, announced three new GaN RF transistors in low-cost plastic packages designed to enable smaller size and greater reliability in civilian marine, airborne and infrastructure radar systems.

M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high-performance analog RF, microwave, millimeter wave and photonic semiconductor products, will showcase a broad portfolio of new products for multi-market, aerospace, defense and networking applications at Booth # 321 at EDI CON 2015 in Beijing, China.

Freescale Semiconductor,  the global leader in radio frequency (RF) power transistors, introduced the industry’s highest power RF power transistors housed in plastic packaging.

Richardson RFPD, Inc. announced the availability and full design support capabilities for four new RF GaN on SiC power transistors from TriQuint. The T1G4004532 is a 45 W (P3 dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32 V. It is offered in flanged and flangeless packages.

 M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications. 

 BeRex, Inc. announces the immediate availability of a new family of low phase noise, high linearity MESFET transistors to complement its popular line of pHEMT transistors. 

Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.

As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader bandwidth demand, Cree, Inc. introduces a family of GaN HEMT RF transistors that delivers industry-leading bandwidth and high efficiency performance to support today’s busy LTE networks.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for five new gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMTs) RF transistors from M/A-COM Technology Solutions (MACOM).