We use cookies to provide you with a better experience. By continuing to browse the site you are agreeing to our use of cookies in accordance with our Privacy Policy.
The MMRF5018HSR5 is a 125 W, continuous wave, RF power transistor optimized for wideband operation up to 2700 MHz. It includes input matching for extended bandwidth performance.
Ampleon introduces the B11G3338N80D push-pull three-stage fully integrated Doherty RF transistor being the carrier product for GEN11 Macro driver family covering all sub-6 GHz frequency bands.
The CLF3H0060-30U is a 30 W, unmatched, broadband, GaN-SiC HEMT transistor usable for both CW and pulsed, general purpose applications in frequency ranges from DC to 6.0 GHz.
Ampleon launched the 600 W BLF0910H9LS600 LDMOS power amplifier transistor, which is the first RF energy transistor using the company’s latest Gen9HV 50 V LDMOS process
A master supply agreement between e2v, the global leader in the high reliability (hi-rel) semiconductor market, and GaN Systems, the leading manufacturer of gallium nitride power transistors, establishes e2v as the global supplier of GaN Systems’ 100V and 650V hi-rel GaN transistor products and customer care for the A&D market.
Legacy Technologies Inc., a world leader in crystal oscillator glass-to-metal seal packages has entered the hi-rel power transistor market with a new line for demanding thermal and electrical management applications of power transistor packages.
Leonardo-Finmeccanica will supply four primary surveillance radar systems based on GaN power transistor technology for Air Traffic Control in China.