Ampleon has launched the 600 W BLF0910H9LS600 LDMOS power amplifier transistor, which is the first RF energy transistor using the company’s latest Gen9HV 50 V LDMOS process, a node that has been optimized to deliver greatly increased efficiency, power and gain. It is designed for use in industrial heating continuous wave (CW) RF energy applications in the 900 to 930 MHz ISM band. Fabricated in a compact ceramic SOT502 package, the transistor combines a high output power with best-in-class operating efficiency within a small footprint. This reduces the space required, and thereby the cost of amplifier designs.
With a high operating efficiency, typically above 68 percent, the need for cooling is also kept to a minimum, helping to further lower the space required. The high gain of the BLF0910H9LS600, typically 19.8 dB, measured with a VDS of 50 V in a 915 MHz CW class AB application, helps to increase the overall amplifier efficiency.
By using two of these compact SOT502 packaged 600 W transistors, it is possible to architect a 1.2 kW RF power amplifier in the same space as a single SOT539 package. This architecture contributes to a lower transistor temperature, resulting in an effective higher efficiency than a single SOT539 solution.
The BLF0910H9LS600 has integrated ESD protection and internal input matching. The matching increases the input impedance and simplifies the design of the PCB matching network to realize a compact amplifier design.