Articles Tagged with ''WIN Semiconductors''

RapidRF is expanding its technology portfolio with new GaAs Technologies from UMS and WIN now available on the RapidRF design platform.

WIN Semiconductors Corp announces the launch of its NP12-1B, a 0.12 μm gate-length depletion-mode GaN HEMT technology on SiC substrates.

WIN Semiconductors Corp announced the inclusion of UK-based Viper RF in its WIN Alliance Program. 

A new collaboration between Partstat and WIN Semiconductors aims to provide comprehensive long-term storage solutions for semiconductors, including die and wafer banking, to meet the evolving needs of the electronics manufacturing industry.

WIN Semiconductors announces the beta release of a moisture rugged 0.1 µm pHEMT technology, PP10-29. 

WIN Semiconductors expanded its portfolio of RF GaN technologies with the beta release of a highly robust mmWave GaN on SiC technology,  NP12-0B. 

WIN Semiconductors Corp. announced the commercial release of its next-generation integrated mmWave GaAs platform, PQG3-0C. 

WIN Semiconductors Corp. announced the commercial release of a 50 V 0.25 µm-gate RF GaN platform.