Infineon Technologies AG released details on a wideband, low-power consumption Low Noise Amplifier (LNA) ideally suited for FM radio active antenna applications in mobile handsets.

With FM radio receivers emerging as a key feature in the next-generation of cellular phones, there is a general trend to replace the headset cable antenna with miniature embedded FM radio antennas. This requires an external LNA to compensate the embedded antenna performance.

Infineon’s new BGB707L7ESD LNA is a wideband, low power consumption general-purpose SiGe:C MMIC LNA in a small TSLP-7-1 package (2.0x1.3x0.4mm). The LNA is as flexible as a discrete transistor and offers numerous integrated features. Circuit designers will appreciate the flexibility and stability of an integrated power-off function for longer battery life, active biasing, a wide operating voltage range and adjustable current. Integrated ESD protection of 3 kV at RF input, a high input gain compression point and excellent noise figure make it suitable for a wide range of RF circuit designs.

The BGB707L7ESD will be available in volume quantities from July 2009 onwards. Pricing starts at USD 0.60 per piece for quantities of 1,000 units.