ANADIGICS Inc. ceremonially broke ground for construction of a new state-of-the-art 6” gallium arsenide (GaAs) integrated circuit (IC) wafer fabrication facility (fab) in the Kunshan New and Hi-Tech Industrial Development Zone (KSND) as part of a city wide celebration in the city of Kunshan in the Jiangsu Province in China.

The ceremony took place at Kunshan New and Hi-tech Industrial Development Zone with Party Secretary of Kunshan Guohua Zhang, Mayor of Kunshan Aiguo Guan and Vice Mayor Feng-Quan Zhu, and several government officials in attendance along with ANADIGICS’ president and CEO, Bami Bastani, executive vice president and CTO, Charles Huang, vice president of worldwide human resources John Warren and other members of ANADIGICS’ workforce.

Driven by Wireless and Wireline Broadband markets, in order to support ANADIGICS anticipated growth beyond its primary wafer fabrication located in Warren, NJ, the company and KSND plan to complete construction of the new facility in the first half of 2008, and to bring the fab operational in the latter part of the year.

“KSND is greatly honored to be involved with this project alongside ANADIGICS,” said Vice Mayor Feng-Quan Zhu of Kunshan. “The addition of the commercial six-inch GaAs wafer fab to the development zone not only shows our ever growing interest of the semiconductor industry, but marks a historical first for the city of Kunshan and the country of China.”

“ANADIGICS is very excited to collaborate with KSND and the city of Kunshan to expand our GaAs wafer fabrication capacity into China while contributing to the growth of our company,” said Bami Bastani, president and chief executive officer of ANADIGICS Inc. “Our new fab in China is a very significant development for both ANADIGICS and the city of Kunshan. Whereas the expansion will enable us to meet our future growth needs, it also demonstrates our commitment to the communications market in China as well as the larger Asia-Pacific Region.”