Ulrich L. Rohde has been given a one-year appointment as a Visiting Scientist at MIT’s Research Laboratory of Electronics in the Microsystems Research Laboratories. These are only given out to renowned industry experts to work with MIT scientists for specific projects. MIT is involved is developing GaN transistors which need to be matched with the demands of the specific applications like medium power amplifiers. Dr. Rohde will be involved in defining and testing high dynamic/low noise input stages in and around many strong signal environments. The projects will also be developing good small signal and low noise FET analytical models up to sub-THz frequencies which are mathematically stable (often derivable and matched over a wide DC range).