Teledyne e2v HiRel Electronics announced that it will be offering High Reliability qualified versions of California-based Integra Technologies, Inc. new 100 V GaN/SiC power transistors.
Integra’s newly announced 100 V RF GaN/SiC gives designers the ability to dramatically increase system power levels and functionality while simplifying system architectures with less power combining circuitry compared to the more commonplace 50 and 65 V GaN technologies. Teledyne will qualify Integra’s first 100 V product, the IGN1011S3600, which offers 3.6 kW at 1030 to 1090 MHz, greater than 19 dB of gain and up to 75 percent efficiency. Teledyne HiRel will provide further assurance for military and new space applications.
“Our most demanding customers are requesting higher power density RF power devices,” said Brad Little, VP and general manager of Teledyne e2v HiRel. “Adding additional screening and qualifications for the new devices will assure long operational life in even the harshest environments.”
- GaN/SiC HEMT Technology
- Ideal for L-Band Avionics IFF & SSR Systems
- Operation at 1,030 and 1,090 MHz
- Output Power >3600 W
- Pre-matched Input Impedance
- High Efficiency up to 75 percent during the RF pulse
- 100 percent RF Tested
- RoHS and REACH Compliant
Here is the Integra Technologies' announcement from yesterday - https://www.microwavejournal.com/articles/36356-integra-technologies-launches-industry-first-100-v-rf-gansic-technology-for-mission-critical-defense-applications.