RFMW announced design and sales support for a versatile, GaN on SiC discrete transistor. NXP’s A3G26D055NT4 RF transistor delivers 55 W of peak power from 100 to 2,690 MHz for applications ranging from cellular infrastructure and RF energy to wideband communications including 5G Massive MIMO radios. Operating from a 48 V supply, the A3G26D055NT4 has a pre-matched RF input and boasts 50 percent efficiency and > 13 dB of gain. The higher power density of GaN on SiC enables a high output impedance, making devices easier to match across the device bandwidth and ensuring a cooler channel temperature for higher reliability.