RFMW announced design and sales support for a GaN RF power transistor. The Qorvo QPD0007 is an unmatched, single-stage transistor offering up to 20 W of output power in frequency bands from DC to 5 GHz. Drain efficiency is >60 percent from a 48 V supply. Available in a 4.5 x 4 mm DFN package, the QPD0007 can be efficiency tuned to provide 19.0 dB of P3dB gain at 3.5 GHz. Applications include power amplifier drivers in mMIMO designs and Doherty drivers.
mMIMO Doherty Driver Transistor Delivers 20 W
GaN RF Power Transistor: QPD0007