RFMW announced design and sales support for a GaN RF power transistor. The Qorvo QPD0007 is an unmatched, single-stage transistor offering up to 20 W of output power in frequency bands from DC to 5 GHz. Drain efficiency is >60 percent from a 48 V supply. Available in a 4.5 x 4 mm DFN package, the QPD0007 can be efficiency tuned to provide 19.0 dB of P3dB gain at 3.5 GHz. Applications include power amplifier drivers in mMIMO designs and Doherty drivers.