RFMW announced design and sales support for a dual-path, GaN transistor. Qorvo’s QPD0305 contains two, 20 W transistors for 3.4 to 3.8 GHz massive MIMO microcell and macrocell base stations. Used as individual drivers or combined as a symmetric Doherty amplifier, each discrete GaN on SiC HEMT, single-stage power transistor provides 17.4 dB of gain. Housed in a low-cost, 7 x 6.5 mm plastic package the RF input is pre-matched for ease of use. The QPD0305 also supports active antenna designs.
2 x 20 W Transistor for 5G mMIMO Infrastructure