Figure 4 Photograph of DBR multi-mode laser to generate inter-modal oscillation.

InP Synthesizer

Figure 4

Figure 4 Photograph of DBR multi-mode laser to generate inter-modal oscillation.

The second innovation is a monolithically integrated design, where the whole synthesizer is realized as a single InP IC, which will operate beyond K-Band. RF oscillation is achieved using the intermodal oscillation output of a long multi-section, multi-quantum well DBR semiconductor laser (see Figure 4), which provides the laser realization for the synthesizer.31-33 The laser consists of four major sections,34 the distributed Bragg reflector (DBR), gain medium, phase tuning section and electro-absorption modulator. The DBR is used as a filter to select the laser output frequency,35 and the phase section tunes the intermodal output to achieve the desired RF output. With this technique, the whole system can be realized within a 5 mm x 2 mm chip without an outside circuit, which is significantly smaller than any conventional RF synthesizer. The performance of the intermodal output at 11.6 GHz is shown in Figure 5. Free running, the output phase noise is around −30 dBc/Hz at 10 kHz offset. With SILTSPLL23 applied, the phase noise drops to −98 dBc/Hz at 10 kHz offset with an offset phase modulator bias of 0 V, yielding a 68 dB phase noise reduction from the free-running case.

Figure 5

Figure 5 SILTPLL-based inter-modal RF phase noise vs. PM bias using SIL of 3 km, STPLL of 500 m, 1 km and 5 km. PM bias of 0 V, –3 V and –5 V are for RF frequency tuning of ~800 MHz from 11.549, 11.938 and 12.272 GHz, respectively.

CONCLUSION

The first article in this two-part series demonstrated a computer-controlled K-Band synthesizer using a MZM-based OEO architecture. Suppression of intermodal oscillation from the long fiber-optic delay lines reduced the close-in phase noise,23 with measured results about −130 dBc/Hz at 10 kHz offset over the full frequency range from 16 to 24 GHz. This second article discusses approaches for reducing the size and cost of the OEO synthesizer by using a PhC-PM device and a Sagnac loop phase modulator to intensity modulator convertor.28-29 Using the PhC-PM instead of the MZM OEO requires forced SILPLL techniques and achieves an estimated −148 dBc/Hz phase noise at 10 kHz offset. PhC-PM design concepts compatible with Si photonics could be integrated with SiGe BiCMOS technology for a full monolithic integration of the photonic and electronic circuits. Forced-oscillation control of an InP based DBR semiconductor laser is another alternative to full monolithic integration. Various high quality factor, low loss optical resonators (e.g., Si3N4 and SiO2) could be employed in place of km-long fiber-optic delay lines to further reduce the size of the optical components used in the SILPLL structure. For example, whispering gallery mode resonators with Q-factors to 108 and optical ring resonators with Q-factors to 105 have been demonstrated,36 which could be integrated using a Si photonics process. These proposed solutions make the realization of OEOs very attractive for future generations of instrumentation, communications and sensing.

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