At IMS2019, Integra will be showcasing a new GaN on SiC high-power transistor in Boston, Mass. from June 4 to 6. As a supplier of GaN on Si RF power transistors to the world’s premier radar system OEMs in aerospace and defense, weather radar, air traffic control, avionics (IFF, SSR, DME, TACAN), data links, EW and industrial/scientific/medical (ISM) markets Integra has a large product range of transistors.
The IGT1112M90 has been designed to suit the unique needs of X-Band radar systems. It operates over the full bandwidth of 10.8 to 11.8 GHz. Under 150 µs, 10 percent duty cycle pulse conditions, it supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35 percent efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.