Richardson RFPD Inc. announced the launch of the GaN & SiC for Power Electronics Tech Hub, a microsite featuring the latest news on GaN and SiC innovations, news and product releases.

The new GaN & SiC for Power Electronics Tech Hub offers a library of GaN and SiC new product features and technical resources, including white papers and videos, as well as links to online purchasing and the option to sign-up for product updates via email.

Richardson RFPD’s broad selection of GaN and SiC products and resources help speed time-to-market as power conversion applications rapidly transition to GaN and SiC technologies.

SiC offers significant advantages in high-power, high-voltage applications where power density, higher performance and reliability are of the utmost importance. Solar inverters, welding, plasma cutters, fast vehicle chargers and oil exploration are a few examples of industrial applications that benefit from the higher breakdown field strength and improved thermal conductivity that SiC offers over Si material.

GaN, a wide band gap semiconductor, is rapidly displacing silicon as the material of choice for power transistors. With superior material properties and simplicity of use, GaN technology allows designers to set new standards for efficiency, power density, size and weight.

The new GaN & SiC for Power Electronics Tech Hub officially launched in January 2019. It is the latest in Richardson RFPD's selection of Tech Hubs.