For cellular infrastructure, Qorvo has introduced a pre-matched, asymmetric Doherty amplifier covering 2.5 to 2.7 GHz that integrates two GaN on SiC transistors in a single NI-780 ceramic package. The QPD2731, in a Doherty configuration, delivers 50 W average output power with 60 percent efficiency operating at 48 V bias. The QPD2731 can be linearized using third-party DPD systems.

Peak Doherty output power, measured at 3 dB compression, is 316 W and gain at 36 W average output power is 16 dB.

For infrastructure power amplifiers, GaN is increasingly capturing market share from LDMOS power transistors because of GaN’s efficiency and bandwidth advantages, particularly at the higher frequency cellular bands. Qorvo is one of several companies pursuing the market opportunity from this technology inflection.