Sumitomo Electric Industries, Ltd will introduce a series of new devices to its line of high-power GaN products for C-Band and X-Band radar applications at IMS2017 in Honolulu.
GaN is a proven and reliable technology for radar applications. Today’s radars provide larger detection area and improved early detection, all while reducing size and weight. GaN provides very high power and bandwidth that improves performance. GaN is the ultimate in performance and high-power density.
C-Band New Product Key Features:
- High Output Power: Psat=350 W (Typ.)
- High Gain: GP=12.8 dB (Typ.)
- High-Power Added Efficiency: 53 percent (Typ.)
- Frequency Band: 5.2 to 5.9 GHz
- Impedance Matched Zin/Zout = 50 ohm
- Hermetically Sealed Package
X-Band ES/SGC0910-300A-R Key Features:
- High Output Power: Psat=340 W (Typ.)
- High Gain: GP=9.3 dB (Typ.)
- High-Power Added Efficiency: 38 percent (Typ.)
- Frequency Band: 9.2 to 10.2 GHz
- Impedance Matched Zin/Zout = 50 ohm
- Hermetically Sealed Package
X-band SGM6901VU Key Features:
- High Output Power: Psat=34 W (Typ.)
- High Gain: GP=23.3 dB (Typ.)
- Frequency Band: 8.5 to 10.1 GHz
- Impedance Matched Zin/Zout = 50 ohm
- 2-Stage, Hybrid Module in Hermetically Sealed SMT Package
Sumitomo Electric remains the leader in GaN and continues to lead in innovation and technology to help customers with lower costs and improved performance for next generation radar systems.
Visit Sumitomo Electric Device Innovations, Booth #1239, to learn more.