SemiGen Inc., an ISO and ITAR registered RF/microwave assembly, automated PCB manufacturing and RF supply center, has added a series of new Schottky diodes to its expanding product offerings.

SemiGen silicon-based Schottky diodes utilize various metallizations to provide excellent performance for low, medium and high barrier applications through 40 GHz. This series of Schottky diodes features small junction capacitance, low 1/F noise, low resistance and multi-junction chips. With forward voltage drops as high at 0.6 V and superior tangential sensitivity (TSS), these diodes are ideal for detector/mixer applications with frequency ranges from S- to Ka-Band. They can also be used as modulators, low power limiters and high speed switches. The 48 different models of Schottky diodes come in chip, glass, ceramic and beam-lead packages.

SemiGen's barrier bridge quads and ring quads offer breakdown voltages as high as 5 V, capacitance ranging from 0.15 to 0.35 pF and a series resistance ranging from 14 to 20 Ω. These bridge quads and ring quads have stable and matched electrical performance, are constructed monolithically and operate from −55°C to 150°C. The quads are ideal for use in designs of doublers, modulators and double-balanced mixers up to 40 GHz.

For more information, visit the SemiGen Product Library to download a full datasheet on the Schottky barrier diodes, at