Solid-state Microwave Amplifier
The model 100S1G4 solid-state microwave amplifier provides 100 W minimum power in the 0.8 to 4.2 GHz range, which is used often in PCS, broadcast communications and other handheld wireless test applications. Local and remote control of the unit is available through its digital control panel (DCP). Additional DCP features include menu-assigned softkeys, a single rotary knob, four dedicated switches, gain control, internal and external automatic level control, pulse input capability and RF output level protection. An IEEE-488 interface is built in. An internal RF detector operates in self-testing and operational modes, and an extensive control and status reporting capability is available. A safety interlock can be implemented via a rear-panel connector. Price: $79,000.
Amplifier Research,
Souderton, PA
(215) 723-8181.

800 MHz High Power Amplifier
The model HPA8 high power amplifier features a reliable four-amplifier design with graceful degradation of output power under fault conditions. The unit operates over the frequency range of 806 to 870 MHz with linear class AB operation, output power of 100 W, 12 V (nom) DC operation, RF input overdrive protection and DC supply over-voltage protection, a wide range of input power levels from 20 mW to 2 W (max) for full output power, and a self-correcting, overtemperature shutdown with alarm. The operating temperature range is from -30° to +60°C.
ElectroCom Communication Systems Inc.,
Santa Fe Springs, CA
(800) 348-1477.

2 - 18 GHz Drop-in Amplifier
The PE1 series drop-in amplifier is capable of gains in excess of 40 dB over the 2 to 18 GHz frequency range and can be used in microstrip or connectorized applications. P1dB is 13.5 dB (typ) and input/output SWR is 2 (max). Size: 1.080" x 0.560" x 0.195".
Planar Electronics Technology Inc.,
Frederick, MD
(301) 662-5019.

SATCOM High Power Amplifier
This satellite communications (SATCOM) high power amplifier is designed for installation directly onto antenna feed-mount applications and will withstand severe environments without the need for bulky outdoor enclosures. The unit is configured with an environmentally sealed coax or waveguide output and is manufactured with an optional integral power supply and a variety of interface options. The amplifier operates over a frequency range of 5.85 to 6.475 GHz with a 1 dB compression point (P1dB) of +51 dBm (min), gain of 60 dB (max) and gain flatness of 1 dB peak to peak (max). In addition, nominal input and output SWRs are 1.5 and 1.3, respectively, and noise figure is 10 dB (max). Size: 14.00" x 6.95" x 1.75" (without heatsink).
Chesapeake Microwave Technologies Inc.,
Glen Rock, PA
(717) 235-1655, ext. 112.

Solid-state Microwave Power Amplifier
The model PA6471-14 solid-state microwave power amplifier serves as a form, fit and function replacement unit for traveling wave tubes in the Harris Farinon model DM6 microwave radio. The amplifier extends the operating life of existing equipment and, with a mean time between failure of up to 25 years, is easy to install and requires no maintenance.
N. Marshall and Associates Inc.,
San Carlos, CA
(650) 610-7900.

3.5 V Power Amplifiers
The models RMPA0913, RMPA0914 and RMPA1902 3.5 V power amplifiers are designed for use in mobile telephone systems. The RMPA0913 is a dual-mode component designed for use in Advanced Mobile Phone Service (AMPS) and CDMA applications and features power-added efficiency of 55 percent at a power output of 31.5 dBm and 39 percent at a power output of 28.5 dBm in the AMPS and CDMA modes, respectively. The RMPA0914 is also a dual-mode component designed for use in total access communications service (TACS) and CDMA applications and features power-added efficiency of 53 percent at a power output of 31.5 dBm and 37.5 percent at a power output of 28.5 dBm in the TACS and CDMA modes, respectively. The RMPA1902 PCS/CDMA power amplifier is designed for use in 1850 to 1910 MHz digital mobile telephones. The unit operates at 3.5 V and features a power-added efficiency of 36 percent at a power output of 29 dBm.
Raytheon Microelectronics,
Andover, MA
(978) 470-9166.

6.5 - 11.5 GHz High Power Amplifier MMIC
The model TGA9083 MMIC power amplifier operates from 6.5 to 11.5 GHz supporting a wide variety of applications, including point-to-point digital radio, phased-array radar and telecommunications applications. The IC provides up to 8 W of output power over the X-band frequency range and includes on-chip active bias circuits and 50 W input/output impedance matching. The unit also provides 19 dB (typ) small-signal gain and up to 40 percent power-added efficiency at 7 V DC. The amplifier comprises a two-stage power amplifier with a 2.5 mm stage driving an 11.6 mm output stage. The active devices are realized on the company's power pseudomorphic high electron mobility transistor (PHEMT) process and have 0.25 mm gate lengths.
TriQuint Semiconductor Inc.,
Hillsboro, OR
(503) 615-9000.

ISM-band LNA
The model 515101 high intercept LNA is designed for wide dynamic range receiver applications. Good low noise performance and low input SWR can be achieved simultaneously using low cost SMT components to implement the input-matching network. The RF range is from 2.1 to 2.7 GHz, noise figure is 1.4 dB, P1dB is 10 dB, input and output SWR are greater than 2, gain is 24 dB and third-order intercept point (IP3) is 10 dBm. The LNA operates from a single +5 V supply, has a DC-blocking capacitor on the RF output and is supplied in a low cost SOIC-8 package. The amplifier is designed for use in wireless local loop, WLAN and other applications in the ISM band.
Watkins-Johnson Co.,
Palo Alto, CA
(800) 951-4401.

Ultra-linear Power Amplifier
The model SM1922-44L ultra-linear power amplifier is designed for use in PCS applications. The unit's compact size and ultra linearity make it suitable for systems used in CDMA, TDMA or high dynamic multicarrier applications. The amplifier covers bands from 1.9 to 2.2 GHz with 53 dB of linear gain and typically produces 41 dBm output power for CDMA applications. DC operation is at 12 V and current varies per application. Additional features include temperature compensation, over- and reverse-voltage protection, thermal protection with auto reset and logic on/off control. RF sampling and power detection also are available. Size: 6.2" x 4.0" x 0.8".
Stealth Microwave,
Trenton, NJ
(888) 772-7791.

Ultra-Broadband Amplifiers
The JCA218-500 series 2 to 18 GHz amplifiers provide a gain of 39 dB (min) and flatness of +/-2.5 dB (max). The units operate at +10 dBm output power with maximum noise figure of 5 dB. The amplifiers run on +15 V DC at 180 mA (nom).
JCA Technology Inc.,
Camarillo, CA
(805) 445-9888.