GaN Low-Noise Amplifier CMD219Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the release of the CMD219, a 4 to 8 GHz low noise amplifier (LNA) in die form, to their growing line of standard GaN amplifier products.

The CMD219 has a gain of 23 dB, an output of 1 dB compression point of +18 dBm, and a noise figure of 1.1 dB across its operating bandwidth. Typical bias conditions are Vdd = 10 V @ 100 mA and Vgg = -2.3 V, although Vdd can vary from 5 V to 28 V. The CMD219 can also survive input power levels of up to 5 W without front-end a limiter.

Ideal applications for the CMD219 include point-to-point and point-to-multipoint radios, military and space, and test instrumentation. All ports are matched to 50 Ohm and do not require any off-chip components, aside from the bias networks which require external bypass capacitors.

To download the full datasheet on the CMD219 Low-Noise Amplifier, visit the Custom MMIC Product Library.