Thermally Enhanced GaN 30W Devices
Suwon, Korea (September 4th, 2008) – RFHIC Corporation, manufacturer of active RF & MW components and hybrids with a heavy focus on GaN technology, has released thermally enhanced gallium nitride devices. RT233, RT240 & RT243 being the prime product, having 36, 43 and 45 dBm measured Psat output power each, from DC- 6 GHz applications. Patent pending thermally enhanced technology has been used to improve high temperature reliability and provide added power when used at pulsed applications or Class-A amplification.
Dr. Samuel Cho, Chief Technical Officer, RFHIC Corporation, said: “RF & Microwave infrastructure applications and broadband communication equipment including broadcasting, Base Station, repeaters & military app power amplifiers are more and more needing wider bandwidth, higher efficiency, better reliability, and higher linearity. This wideband characteristic of GaN (Gallium Nitride) technology enables multi-channel carrying capability for communication equipments, such as Cellular+PCS+WCDMA, GSM+DECT+UMTS or Ground+Airborne+Naval communication. GaN also makes possible for smaller system designs, with better efficiency, thus needs less land space for installation.”
GaN, or gallium nitride, has risen from the laboratory to the real RF & Microwave power amplifier world and is gaining market share over other technologies. GaN device technology provides higher efficiency, broader bandwidth coverage, better reliability, higher operating voltage, higher operating temperature, and higher in/output impedance, which all adds benefits for the next generation communication equipments. GaN is already widely used in Blue LED for display, White LED for lighting, and industrial diode production. When this application expands to communication markets and broadcasting markets, this can add better choices on developing new generation products.
The RT233, RT240 and RT243 transistors are packaged in a thermally enhanced package, and are available with standard(RT233C, RT240C & RT243C : C-series), or earless type(RT233N, RT240N & RT243N : N-series) designs. Wideband capable characteristics can give 50~2500Mhz wideband applications and other design opportunities. These RoHS compliant device samples are available through international representative networks or by directly contacting email@example.com.
RFHIC has qualified the mass-production versions of the RT233C/N, RT240C/N and RT243C/N. As a low cost solution provider, RFHIC will provide these GaN devices at lower cost and this will make way for a new GaN generation which has lower cost than GaAs technology in the field right now. For additional information regarding RFHIC’s GaN devices, visit www.rfhic.com or contact firstname.lastname@example.org, (Tel:82-31-250-5011)