advertisment Advertisement
This ad will close in  seconds. Skip now
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement

ARTICLES

A 10 W 2 GHz Silicon Carbide MESFET

A 48 V power transistor that features 12 dB of linear gain at 2 GHz
Cree Research
No Comments
A 10 W 2 GHz Silicon Carbide MESFET Cree Research Durham, NC One of the major problems facing traditional silicon and GaAs high power semiconductor devices is junction temperature. The devices’ high currents inevitably generate excessive heat that must be dissipated to keep the junction temperature within acceptable limits....
Read More

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement