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Industry News

Infineon and Panasonic to jointly develop GaN power devices

Infineon Technologies AG and Panasonic Corp. have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s surface-mounted device (SMD) packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure. This agreement will enable each company to manufacture high performing GaN devices. Customers will have the added advantage of having two possible sources for compatible packaged GaN power switches: a setup not available for any other GaN on silicon device so far.


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RFS' in-tunnel and in-building solutions enable new network deployments worldwide

Radio Frequency Systems (RFS), the global wireless and broadcast infrastructure specialist, announced that 2014 was another record-breaking year for deployments of its RADIAFLEX® and CELLFLEX®cables and related products.The company’s market-leading passive and active in-tunnel and in-building wireless networking solutions were used by major mobile operators and integrators to deliver uninterrupted coverage and capacity in some of the most challenging indoor venues around the world, including office buildings, research centers, metro rail tunnels, road tunnels, airports, exhibition grounds and stadiums.


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