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The Strategy Analytics annual forecast, “Markets for SI GaAs Epitaxial Substrates: 2008-2013,” covering the semi-insulating (SI) GaAs (gallium arsenide) epitaxial substrate market, concludes that the 2008 SI GaAs epitaxial substrate market grew 22 percent year-on-year, but projects a flat-to-negative market in 2009. Growth is forecast to return in 2010, leveraging multiple GaAs device insertions in next-generation cellular handset platforms, augmented by GaAs device demand from other markets.
While suppliers have traditionally focused on providing Heterojunction Bipolar Transistor (HBT), High Electron Mobility Transistor (HEMT) and Field Effect Transistor (FET) epitaxial structures, the market is seeing greater emphasis on solutions that allow multiple structures to be combined on the one substrate in order to provide Bipolar Field Effect Transistor (BiFET) or Bipolar High Electron Mobility Transistor (BiHEMT) devices.
“We estimate that BiFET/BiHEMT structures accounted for 6 percent of the total SI GaAs epitaxial substrate market in 2008,” observed Asif Anwar at Strategy Analytics. “While still small, this segment will show the fastest growth through 2013 as GaAs device manufacturers look to differentiate their products by offering integrated solutions.”
This study provides an examination of supply chain dynamics, coupled with extensive analysis of end-demand drivers for SI GaAs epitaxial substrates. The resulting scenario through 2013 suggests epitaxial substrate demand will grow at a CAAGR (compound annual average growth rate) of 5 percent over 2008 to 2013. The corresponding market for GaAs Metal Organic Chemical Vapor Deposition (MOCVD) and Molecular Beam Epitaxy (MBE) substrates will be worth $402 M in 2013.
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