Mimix Asia Launches 8.5 to 11 GHz Highly Integrated Core Chip
Mimix Asia introduces an 8.5 to 11 GHz gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) core chip, which consists of integrated transmit/receive switches, an LNA, a 6-bit phase shifter, a 5-bit attenuator and a driver amplifier. This core chip, identified as XZ1002-BD, features parallel data input and compensated on-chip gate bias and delivers 21 dB RX gain, 23.5 dB transmit P1dB and 28 dBm receive OIP3. The transmit amplifier also has a typical small-signal gain of 19 dB with excellent input and output match. The XZ1002-BD is well suited for both military and weather phased-array radar applications and satellite communications systems.
"Our highly integrated X-band core chip combines four functions in one device, making a two-chip phased-array radar T/R module a reality when matched with our XP1006 10W power amplifier,” says Peter J. Hales, vice president sales, Mimix Asia. “With these two devices, active X-band phased-array and T/R module manufacturers can add an accurate, fast and inexpensive solution to their arsenal."
Mimix performs 100 percent on-wafer RF, DC and output power testing on the XZ1002-BD, as well as 100 percent visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
Engineering samples are available today from stock, and production quantities are available 14 weeks ARO.