Toshiba America Electronic Components Inc. (TAEC) announced the addition of two new gallium nitride (GaN) semiconductor high electron mobility transistors (HEMT) to its power amplifier product family.
The first GaN HEMT for satellite communication applications from Toshiba, the Ku-band TGI1414-50L, operates in the 14 to 14.5 GHz range with output power of 50 W. The device features output power of 47.0 dBm (typ.), with 42 dBm input power, linear gain of 8.0 dB (typ.) and drain current of 5.0 amps (typ.). Targeted applications are SATCOM applications, such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT). An extended Ku-band power amplifier for the 13.75 GHz to 14.5 GHz range will be released in the near future.
The X-band TGI0910-50 operates in the 9.5 to 10.5 GHz range with output power of 50 W. It features output power of 47 dBm (typ.) with 41 dBm input power, linear gain of 9 dB (typ.) and drain current of 4.5 amps (typ.). Targeted applications include Doppler radar that can detect the motion of rain droplets and intensity of precipitation for severe weather warning, and Doppler radar for border surveillance and security.