- Buyers Guide
The Cree GaN HEMT MMIC process features high power density (4-6 watts/mm) transistors, slot vias, and high reliability (up to 225ºC operating channel temperatures), as well as scalable transistors. In addition, the Cree/AWR PDK leverages AWR’s Intelligent Net (iNet™) automated interconnect construction technology to automatically radius and fillet corners when connecting different parts together, thereby ensuring design-rule-check (DRC)-compliant layouts and eliminating the need for manual editing. The Cree/AWR PDK is also setup for ready electromagnetic (EM) extraction through AWR’s EXTRACT technology, which can save designers’ time by not having to manually edit schematics for EM results.
The Cree/AWR PDK for GaN HEMT MMIC process is available now. Contact your local Cree representative to obtain this PDK and/or for more information or visit the company’s website by clicking the link below our logo on this page.